I was creating a memristor library on Pspice. I sucesfully did it but I was trying to understand the syntax. I found this off a iEEE published paper and wanted to know of what the syntax means.
It is shown below. I understand Line 1 is creating a memristor with input signal - 1, output signal - 2, and state signal - 6. However, what does Eres, Vsense, Fcopy, etc mean? Is Vsense the voltage defiened for Vdd and Vss? And what about the LRS/HRS resistance values for memristors? What does "Vsense 9 4 DC 0V" mean? I just need a quick understanding of the syntax/variables. Unless you guys have any link/website where it shows this.
1. .SUBCKT memristor 1 2 6
2. Eres 1 9 POLY(2) (8,0) (10,0) 0 0 0 0 1
3. Vsense 9 4 DC 0V
4. Fcopy 0 8 Vsense 1
5. Rstep 8 0 1K
6. Rser 2 4 10
7. Gmem 6 0 VALUE={I(Vsense)*max(v(6,0)*(1-v(6,0)), 0)}
8. Cmem 6 0 50nF
9. Ecpy 10 0 VALUE={min(max(v(6,0), 0), 1)}
10. Rsp 6 0 1000Meg
11. .ENDS
12. *$
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Hi,
It seems that Eres, Vsense, Fcopy are the reference designators that the creator of this subcircuit used to define them. Actually the name of the component appears afterwards.
In this case:
Eres: It is a voltage controlled voltage source (EPOLY)
Vsense: It is a DC source (VDC)
Fcopy: I am not sure. I could be EVALUE
I hope it helps a little bit.