Once i build the inverter circuit and simulate using SPICE tool, i can plot the I-V characteristic...Is there any possibility to change the built in drain current expression..[for eg :instead of Id= 0.5K(vgs-vth)^2 to Id=0.5K(vgs-vth)^3] ?
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can you share your circuit and models used? The answer to your question would depend upon circuit and model implementation.
As per my knowledge you can't change the Id equation for built-in NMOS/PMOS device avaiable in simulator library but you can develop your own MOS device with your equation.
May i know whats the procedure to develop a new MOS device with proposed equations ?